Nanocrystalline Tungsten Oxide Thick Film Sensor for the Detection of H2S Gas

Resistance variation on the introduction of different concentration of test gas


Metal oxide semiconductors (MOS) have been utilized as gas sensing active materials for half a century. One of the most promising solid-state MOS chemo sensors is n-type semiconducting tungsten oxide-based  gas  sensor.  They  have  demonstrated  novel sensing  properties  such  as  high  sensitivity,  fast response  time  and  low  operation  temperature.  In particular,  pure  or  doped  tungsten  oxide  is  a  promising material for the detection of various substances, e.g., H2,H2S,NOx, NH3 and ethanol.

Scientists have investigated  the sensing characteristics  of  WOnanoparticles  to H2S  in  the 7 to 200 ppm range at working temperatures of the range of 100–225 ℃.  Semiconductor  gas  sensors  based  on nanocrystalline  WO3  powders  were  prepared  by  acid precipitation method. The thick films of the powder were coated on to glass  substrate, annealed at 600 ℃ and its response  to  different  concentration  of  H2S  gas  was studied.  Sensor behavior is presented in detail for representative concentration of 18ppm. The result showed that WOnanoparticles are good candidates for sensing H2S at a temperature of 200 ℃.

Sensitive  layers  of  tungsten  oxide  were  prepared  by dispersing  the  prepared  tungsten  oxide  powder  in methanol and drop casting on glass  substrates followed by  overnight  annealing  at  600 ℃.  The obtained crystalline phase of WO3 nanoparticles was triclinic in nature. The structure of sensor was characterized using XRD.  The surface morphology and elemental composition were characterized by scanning electron microscopy and energy dispersive X-ray analysis. It was found that the WO3 samples consisted of crystalline aggregates.  This was confirmed in TEM results.  The particles were spherical in nature.  Gas  sensing properties  of  samples  were  studied  for  the  detection  of H2S  gas.   Resistance  of  the  films  decrease  upon exposure  to  gases  and  attained  a  saturation  value.

Sensor regains its original value after test gas is removed. Sensor exhibit good sensing characteristics to H2S in the concentration range studied, 7 to 200 ppm over the temperature range 100-125 0C. The best results were obtained at operating temperature of 200 ℃ with a sensitivity of 1.3. Response and recovery time of sensor at this optimum temperature was 22 seconds and 4.1 minutes respectively. Lowest measurable concentration is found to be 7ppm. Resistance  always  returned  to  its initial  value  after  the  test  gas  is  shut  off  for  all concentration  studied. Results indicate that response of sensor is reproducible during this test. 

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