Tungsten Oxide

Researchers in the US and Korea say they have developed a new way to make a flexible, resistive random access memory (RAM) device in a room-temperature process – something that has proved difficult to do until now.  The device, which is based on nanoporous tungsten oxide , is a bipolar switch and has a high on/off current ratio of more than 10 5 . It can also be bent and unbent over 10 3  cycles without suffering any significant loss in performance. For more than half a century, silicon-based complementary metal-oxide-semiconductor (CMOS) transistors have been the uncontested leaders in the electronics memory industry. However, such memory is reaching its fundamental limits because it is difficult to make CMOS transistors any smaller using current technology – something that will be a drawback for next-generation nanomemory applications. These memories are also quite expensive to assemble and suffer from relatively low switching speeds (of a few microseconds). Rese...

Electrochemical oxidation preparing nanoporous tungsten oxide electrode: 1) Treating method for tungsten foil: Firstly cut it into 10mm x 15mm pieces, using waterproof abrasive to polish it, then clean it with acetone, isopropanol, methyl alcohol and deionized water ultrasound cleaning for 15min, blow it with nitrogen gas. 2) Use tungsten foil as anode, Pt foil of 10 x 15mm as counter electrode, put them into electrobath, the distance between two electrodes is 25mm. Then put electrobath in water bath of constant temperature, adjust the bath temperature to control the reaction temperature. The reacting area is 0.88cm2. Adding a certain amount of ready-prepared 1mol/L（NH 4 ） 2 SO 4  solution electrolyte with different concentration of NH 4 F. 3) Clean the ready-prepared WO 3  nanoporous thin film with deionized water, blow-dry with nitrogen gas in the air and put them in muffle furnace, the heating rate is 5℃/min, cool it down to room temperature, then packed it to nanoporo...