Electrical Properties of Tungsten Disulfide
The structure of tungsten disulfide is a hexagonal layered structure with excellent electrical properties. In tungsten disulfide, the interaction between the W atoms in the layer and the surrounding S atoms is strong, and the interaction between the tungsten disulfide layer and the layer is weak. The thermal stability of two tungsten sulfide is stronger than that of molybdenum disulfide. The temperature range is wide, and it is not easy to decompose. Oxidation occurs at 539 degrees centigrade. Therefore, tungsten disulfide is an excellent semiconductor material for indirect bandgap semiconductors. When the thickness of tungsten disulfide is reduced to a single layer, it changes into a direct band gap, which means that tungsten disulfide can effectively pass through the bandgap transition absorb or emit photons. The band gap of monolayer tungsten disulfide is about 2eV. This electrical performance characteristic is the main advantage of tungsten disulfide in semiconductor tubes, transi...