Tungsten Oxide

Tungsten doping is a promising and effective way to reduce the phase transition temperature of vanadium didioxide. Doping can improve the electrical properties of vanadium dididioxide thin films, reduce the square resistance of the films, and improve the resistance temperature coefficient of the films. Common methods of doping include evaporation, ion implantation, sol-gel and magnetron sputtering. Researchers have developed a method for preparing tungsten doped vanadium dioxide thin films, including the following steps: (1) The substrate is cleaned, and the cleaned substrate is put into the high real chamber. (2) Preparation of VO x /W/VO x  composite film: The argon, metal vanadium target and tungsten metal target are placed in the vacuum chamber, and the metal vanadium target and tungsten target surface are pre sputtered by the sputtering power source of vanadium target and the tungsten target sputtering power, respectively. When the vanadium target is sputter target, the tungs...

Among the vanadium oxides, vanadium dioxide is distinguished by its rapid and abrupt phase transition, and its phase transition temperature is 68  °C. The reversible change from low temperature monoclinic system to high temperature tetragonal system leads to great changes in physical properties such as resistivity, optical transmittance, permeability and so on. This feature makes it very promising in intelligent switches, electronic devices and optoelectronic devices. However, in daily life, the application temperature of 68 degrees is still too high, so it is necessary to reduce the VO 2  phase transition temperature, so that VO 2  can be widely used. In recent years, many studies have shown that doping of other elements in VO 2  can effectively reduce its phase transition point. Especially the high valence metal ions, such as MO 6+ , W 6+  and so on, doping effect is particularly significant. The amount of ammonium metatungstate was mixed with vanadium oxide b...