Tungsten Oxide

In an e-mail interview with IEEE Spectrum, Shahrjerdi explained that the resulting tungsten disulfide provided a large energy bandgap (2.0 electron volts). Its charge carriers also had a small effective mass: the smaller the effective mass the higher the carrier mobility. “The carrier mobility of our film is 2-3 times better than the best reports in the literature,” said Shahrjerdi. But there’s a catch: it’s tricky to develop a process that will lead to large-area synthesis of device quality TMDs. Now researchers at New York University’s (NYU) Tandon School of Engineering may have taken a big step toward closing down this issue with a new manufacturing process for tungsten disulfide that resulted in highest quality ever reported for the material. In research described in Applied Physics Letters, the scientists made some variations on the process known as chemical vapor deposition (CVD). In CVD, gaseous reactants are introduced into a furnace to form a film on a metal substrate...