The fuel cell has easily obtained raw materials, high energy density, long service life, cleaning and other advantages, as a new energy efficient conversion system.
As a new type of solid lubricating material, tungsten disulfide has excellent lubricity and environmental strain ability. It is a high-end precision industrial lubricating material.
Tungsten trioxide (WO3) is a product of tungstate or calcining ammonium paratungstate, is an important intermediate compound of high purity tungsten.
The reason why semiconductor memory chooses nano tungsten oxide material to produce storage media is that it is a very important semiconductor material with good electrochemical performance, and its resistance value can undergo reversible transformation under the action of an electric field. Next, let's take a look at the manufacturing method of a storage device based on a tungsten oxide storage element.
Manufacturing method (1)
The storage device includes a plug that extends upward from the top surface of the substrate through a dielectric layer. A bottom electrode, the outer surface of the bottom electrode has tungsten, the bottom electrode extends upward from the top surface of the plug. An insulating material, the insulating material surrounds the bottom electrode is in contact with tungsten on the outer surface of the bottom electrode. The storage element is located on the upper surface of the bottom electrode, the storage element includes a tungsten oxide compound, and the storage element can be programmed to at least two resistance states. And the top electrode, the top electrode overlay and contact the storage element. In addition, the plug has a first lateral dimension, the bottom electrode has a lateral dimension, the lateral dimension is parallel to the first lateral dimension of the plug, and the lateral dimension is smaller than the first lateral dimension of the plug.
Manufacturing method (2)
The tungsten oxide storage part is formed using a non-critical mask tungsten oxide material, or in some embodiments, it may be formed without any mask. The memory device disclosed herein includes a bottom electrode and a memory element, and the memory element is located on the bottom electrode. The memory element includes a tungsten oxide compound and has more than two resistance states; the upper electrode includes a barrier material located on the memory element, and the purpose of the barrier material is to prevent metal ions from moving from the upper electrode into the memory.
Compared with traditional semiconductor storage devices, tungsten oxide storage devices have better response performance.
Tungsten oxide is a very classic low-dimensional transition metal oxide material, which is attracted by its special physical and chemical properties (such as electrochromism, photochromism, catalytic activity, superconductivity and large load capacity, etc.) A large number of materials, semiconductor devices, and physics and chemistry researchers are paying attention. However, there is no report on white tungsten oxide and its preparation method.
The chemical formula of white tungsten oxide is the same as that of purple tungsten oxide, which is W18O49. It can be excited to become blue under the irradiation of ultraviolet light, and it can be restored to white after removing the ultraviolet light. It is widely used in construction, automobiles and other fields.
A method of producing white W18O49, there are the following steps:
Disperse the tungsten hexachloride ultrasonically in anhydrous n-butanol, of which 150ml anhydrous n-butanol is used per gram of tungsten hexachloride. When the system turns from yellow to blue during the ultrasonic process, stop the ultrasound, and then add it to the system Sodium nitrate, the amount of sodium nitrate is 1.5-3 times the mass of tungsten hexachloride, put the mixed system into the reaction kettle, control the reaction temperature at 180-220°C, and control the reaction time at 6-12 hours; wait for the end of the reaction After cooling to room temperature, the obtained product was washed with water and ethanol, centrifuged, and dried to obtain powdery white W18O49.
This method uses tungsten hexachloride and n-butanol as reactants. The color of the reaction product W18O49 can be adjusted by controlling the amount of sodium nitrate added. When the mass ratio of sodium nitrate and tungsten hexachloride is more than 3:2, white 118049 can be obtained. . The advantage is that by adding sodium nitrate to the system to modify the surface of the tungsten oxide, white tungsten oxide is obtained, which is obviously different from the W18O49 obtained by the general solvothermal method in appearance and color; and the production is simple and easy.
In addition to the production of tungsten trioxide (WO3) ultrafine particles, they can be used to produce tungsten powder, tungsten carbide powder, yellow ceramics, electrode materials for energy storage batteries, anti-corrosion paints and coatings, and can also be used to make multifunctional mulch films. Compared with ordinary agricultural film, the agricultural film containing tungsten oxide additives has higher comprehensive performance, which is mainly manifested in better heat insulation effect and better light transmission performance.
In areas with strong sunlight, when the temperature is too high, it is easy to produce drought and cell dehydration, which affects the physiological and metabolic activities of plants, such as photosynthesis, water metabolism, endogenous hormones, and thermal stability of cell membranes, which in turn leads to the appearance and growth of plants abnormal. Therefore, it is of practical significance to produce agricultural film with good heat insulation effect. However, a film with excellent heat insulation effect means that it has better near-infrared absorption performance.
In addition to good heat release effect, the new thermal insulation film also needs to have excellent light transmittance, so that it is convenient for managers to observe the production of crops at any time, without lifting the film, which improves the work efficiency of managers. At the same time, it can also reduce the rate of film breakage. The agricultural film with excellent light transmittance means that it has a higher transmittance to visible light.
WO3 is a classic transition metal n-type semiconductor material. It has excellent optical properties, that is, it has a significant absorption effect on near-infrared light in the 1400~1600nm and 1900~2200nm bands, and it also has high permeability to visible light. Therefore, it is favored by materials researchers at home and abroad. It is often used as a key modifier for commercial mulch films, which can significantly increase the near-infrared absorption capacity and light transmittance of the product, which is more conducive to the growth of crops.
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