Tungsten Oxide Thin Film Electrode Preparation Method
Nano semiconductor material used as photocatalyst to photolysis water has gained well efficiency. TiO 2 has high catalytic activity and stability is widely used as a kind of photocatalytic material. But its band gap is big (~3.2 eV), it can only be motivated by ultraviolet with short wave length, its light transaction efficiency is low (~4%). Tungsten oxide is an indirect band series transition semiconductor material. Compared to TiO 2 , it has narrow band gap (2.5~3.0 eV), the relevant absorbing wave length is 410~500nm and well photoelectric responsive property in visible light area. Tungsten oxide thin film electrode preparation method: Raw material: FTO glass; tungstic acid; hydrogen peroxide; acetone. (1) Be ready with clean FTO glass as the substrate of depositing WO 3 . Cut FTO glass into 1.2cm*2.5cm pieces and clean it by ultrasound and ultraviolet. The clean and flatness of FTO substrate has big effect on adhesive force and uniformity of thin film electrode. So before