Nanoporous Tungsten Oxide Making Flexible Memories Device at Room Temperature
Researchers in the US and Korea say they have developed a new way to make a flexible, resistive random access memory (RAM) device in a room-temperature process – something that has proved difficult to do until now. The device, which is based on nanoporous tungsten oxide , is a bipolar switch and has a high on/off current ratio of more than 10 5 . It can also be bent and unbent over 10 3 cycles without suffering any significant loss in performance. For more than half a century, silicon-based complementary metal-oxide-semiconductor (CMOS) transistors have been the uncontested leaders in the electronics memory industry. However, such memory is reaching its fundamental limits because it is difficult to make CMOS transistors any smaller using current technology – something that will be a drawback for next-generation nanomemory applications. These memories are also quite expensive to assemble and suffer from relatively low switching speeds (of a few microseconds). Rese...