Tungsten Oxide

Monolayer tungsten disulfide is a kind of nano material with layered structure, it has better temperature stability than monolayer disulfide. It has attracted much attention in recent years because of its better optical and electrical properties, in the semiconductor field such as transistors, tungsten disulfide is an indirect bandgap semiconductor, forbidden band width is  2.0eV, it has more space than the application of graphene in the field of electronic tube. At present, the most important methods to prepare monolayer tungsten disulfide in China are three methods: RF sputtering, reactive magnetron sputtering and chemical deposition. In recent years, the research on the preparation of two-dimensional TMDCs by CVD(chemical vapor deposition) method is mainly focused on molybdenum disulfide, because MoS 2  requires lower temperature and it is easy to control the growth process, tungsten disulfide seems much more complex. There are two main ways to prepare tungsten disulfide fi...

Two dimensional transition metal chalcogenide (TMDCs) is considered as a potential star material for future applications of electronic devices because of its graphene like structure. The current research more semiconductor materials are tungsten disulfide WS 2 , molybdenum disulfide MoS 2 , MoSe 2  molybdenum selenide, WSe 2  tungsten selenide and so on. Among them, WS 2  has the most promising application in electronic devices because of its bipolar electron transport properties. Single layer two W is a kind of layered material similar to graphite with a layer spacing of 0.7 nm. WS 2  is an important photoelectric material. When WS 2  is changed from bulk material to single layer, the material changes from indirect bandgap to direct band gap semiconductor, and the band gap will change from 1.3eV to 2.0eV, which makes the monolayer tungsten disulfide thin films have important potential applications in photoelectric detectors and solar cells. Monolayers of tung...