Chemical Deposition Method Preparing Monolayer Tungsten Disulfide
Monolayer tungsten disulfide is a kind of nano material with layered structure, it has better temperature stability than monolayer disulfide.
It has attracted much attention in recent years because of its better optical and electrical properties, in the semiconductor field such as transistors, tungsten disulfide is an indirect bandgap semiconductor, forbidden band width is 2.0eV, it has more space than the application of graphene in the field of electronic tube. At present, the most important methods to prepare monolayer tungsten disulfide in China are three methods: RF sputtering, reactive magnetron sputtering and chemical deposition.
In recent years, the research on the preparation of two-dimensional TMDCs by CVD(chemical vapor deposition) method is mainly focused on molybdenum disulfide, because MoS2 requires lower temperature and it is easy to control the growth process, tungsten disulfide seems much more complex.
There are two main ways to prepare tungsten disulfide film by CVD method in laboratory: one step reaction method and two step method. One step reaction is the method that directly make the reaction of S source with W source to generate WS2 and deposit on the target substrate in CVD furnace. The two step method is to pre deposit a layer of metal W film on the target substrate, the WS2 film is then synthesized by sulfidation in CVD furnace. The above two CVD methods do not perfectly solve the large-area controllable monolayer and minority layer WS2 films.
Overall, growth conditions on the preparation of WS2 is critical. In the process of two-dimensional WS2 prepared by CVD method, it has more stringent requirements on the instrument and growth process, and the cost of the experiment is high. We believe that in the near future, WS2 film development bottleneck will soon be widened to promote its device and industrialization process.
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