Nano Tungsten Oxide for Semiconductor Memory
The reason why semiconductor memory chooses nano tungsten oxide material to produce storage media is that it is a very important semiconductor material with good electrochemical performance, and its resistance value can undergo reversible transformation under the action of an electric field. Next, let's take a look at the manufacturing method of a storage device based on a tungsten oxide storage element. Manufacturing method (1) The storage device includes a plug that extends upward from the top surface of the substrate through a dielectric layer. A bottom electrode, the outer surface of the bottom electrode has tungsten, the bottom electrode extends upward from the top surface of the plug. An insulating material, the insulating material surrounds the bottom electrode is in contact with tungsten on the outer surface of the bottom electrode. The storage element is located on the upper surface of the bottom electrode, the storage element includes a tungsten oxide compound, and the s...