Zirconium Tungstate Thin Film
A thin film material is a film material with a thickness less than 1 microns. It is mainly used for semiconductor functional devices and optical coatings.
At present, the field has been involved in computer storage equipment, pharmaceuticals, high temperature insulation products, thin-film batteries, solar cells etc..
Compared with traditional block materials, thin film materials have incomparable advantages, such as small grains, large specific surface area and special surface structure. Therefore, zirconium tungstate is a kind of excellent negative thermal expansion material. The thin films prepared with zirconium tungstate can be conveniently used in the compensation layer of thermal stable structures or into large capacity heat driven devices, This is also the other general material is difficult to take advantage of it, so these years the zirconium tungstate thin film or zirconium tungstate composite thin film has also been concerned and research hot spots.
It is well known that zirconium tungstate is mainly produced by the synthesis of ammonium paratungstate and zirconium oxychloride, and the difficulty of making the powder is a major obstacle to the popularization of zirconium tungstate thin film.
The research shows that the methods of preparing zirconium tungstate thin film are mainly current beam evaporation powder method, wet chemical method, radio frequency magnetron sputtering method, alternating radio frequency magnetron sputtering method. Among them, the evaporation process of the current beam evaporation method is not well controlled, and the WO3 is easy to volatilize at high temperature, the stoichiometry of the film element is inconsistent with the Zr2W2O8 target; The purity of zirconium tungstate thin film made by wet chemical method and radio frequency magnetron sputtering method is not very high; The only thing worth mentioning is the alternating magnetron sputtering method based on RF magnetron sputtering, the method of preparation of zirconium tungstate thin films on quartz substrate deposition and annealing process, the sample obtained is cubic phase zirconium tungstate thin film, the purity and quality are improved, but the corresponding increase in procedure leads to higher cost.
To sum up, the zirconium tungstate thin film will take a place in the future high and new technology field with its excellent performance, but immature, inexpensive schemes also limit its use. However, as a new thing, the study of zirconium tungstate thin film is still in the initial stage, it is worth looking forward to the future.
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